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IEC 60747-8:2010

IEC 60747-8:2010

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

Dispositifs à semiconducteurs - Dispositifs descrets - Partie 8: Transistors à effet de champ

Fecha:
2010-12-15 /Vigente
Resumen (inglés):
IEC 60747-8:2010 gives standards for the following categories of field-effect transistors: - type A: junction-gate type; - type B: insulated-gate depletion (normally on) type; - type C: insulated-gate enhancement (normally off) type. The main changes with respect to the previous edition are listed below. a) "Clause 3 Classification" was moved and added to Clause 1. b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions. c) Clause 5, 6 and 7 were amended with necessary additions and deletions. This publication is to be read in conjunction with IEC 60747-1:2006.
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